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 CMXT3904 SURFACE MOUNT DUAL NPN SILICON TRANSISTORS
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DESCRIPTION: The CENTRAL SEMICONDUCTOR CMXT3904 type is a dual NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a SUPERminiTM surface mount package, and designed for small signal general purpose amplifier and switching applications. MARKING CODE: X1A
SOT-26 CASE
MAXIMUM RATINGS: (TA=25C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance ELECTRICAL SYMBOL ICEV BVCBO BVCEO BVEBO VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) hFE hFE hFE hFE hFE fT Cob Cib hie
SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg JA
60 40 6.0 200 350 -65 to +150 357
UNITS V V V mA mW C C/W
CHARACTERISTICS PER TRANSISTOR: (TA=25C unless otherwise noted) TEST CONDITIONS MIN MAX VCE=30V, VEB=3.0V 50 IC=10A 60 IC=1.0mA 40 IE=10A 6.0 IC=10mA, IB=1.0mA 0.20 IC=50mA, IB=5.0mA 0.30 IC=10mA, IB=1.0mA 0.65 0.85 IC=50mA, IB=5.0mA 0.95 VCE=1.0V, IC=0.1mA 40 VCE=1.0V, IC=1.0mA 70 VCE=1.0V, IC=10mA 100 300 VCE=1.0V, IC=50mA 60 VCE=1.0V, IC=100mA 30 VCE=20V, IC=10mA, f=100MHz 300 VCB=5.0V, IE=0, f=1.0MHz 4.0 VBE=0.5V, IC=0, f=1.0MHz 8.0 VCE=10V, IC=1.0mA, f=1.0kHz 1.0 10
UNITS nA V V V V V V V
MHz pF pF k
R3 (12-February 2010)
CMXT3904 SURFACE MOUNT DUAL NPN SILICON TRANSISTORS
ELECTRICAL SYMBOL hre hfe hoe NF td tr ts tf
CHARACTERISTICS PER TRANSISTOR - Continued: (TA=25C unless otherwise noted) TEST CONDITIONS MIN MAX UNITS VCE=10V, IC=1.0mA, f=1.0kHz 0.5 8.0 x10-4 VCE=10V, IC=1.0mA, f=1.0kHz 100 400 VCE=10V, IC=1.0mA, f=1.0kHz 1.0 40 S VCE=5.0V, IC=100A, RS=1.0k, f=10Hz to 15.7kHz 5.0 dB VCC=3.0V, VBE=0.5V, IC=10mA, IB1=1.0mA 35 ns VCC=3.0V, VBE=0.5V, IC=10mA, IB1=1.0mA 35 ns VCC=3.0V, IC=10mA, IB1=IB2=1.0mA 200 ns VCC=3.0V, IC=10mA, IB1=IB2=1.0mA 50 ns
SOT-26 CASE - MECHANICAL OUTLINE
LEAD CODE: 1) Emitter Q1 2) Base Q1 3) Collector Q2 4) Emitter Q2 5) Base Q2 6) Collector Q1 MARKING CODE: X1A
R3 (12-February 2010)
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